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SFI9Z14TU

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SFI9Z14TU

P-CHANNEL POWER MOSFET

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor SFI9Z14TU is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and supports a continuous drain current (Id) of 6.7A at 25°C (Tc). With a maximum Rds On of 500mOhm at 3.4A and 10V gate drive, it offers efficient power switching. The device boasts a maximum power dissipation of 38W at 25°C (Tc) and 3.8W at 25°C (Ta). Key electrical characteristics include an input capacitance (Ciss) of 350 pF and a gate charge (Qg) of 11 nC, both specified at relevant operating conditions. The TO-262-3 Long Leads (I2PAK) package facilitates through-hole mounting. This MOSFET is suitable for use in industrial power control, automotive systems, and power supply designs. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6.7A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 3.4A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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