RFP15N05L
MOSFET N-CH 50V 15A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor RFP15N05L is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 15A at 25°C, with a maximum power dissipation of 60W (Tc). The low on-resistance of 140mOhm is specified at 15A and 5V gate-source voltage. With a threshold voltage (Vgs(th)) of 2V at 250µA and a maximum gate-source voltage of ±10V, it offers efficient switching characteristics. The input capacitance (Ciss) is 900pF at 25V. This component is housed in a TO-220-3 package suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. It finds application in power supply, motor control, and general switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 15A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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