RFG40N10
MOSFET N-CH 100V 40A TO247-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor RFG40N10 is a 100V N-Channel power MOSFET housed in a TO-247-3 package. This component offers a continuous drain current capability of 40A at 25°C (Tc) and a maximum power dissipation of 160W (Tc). It features a low on-resistance of 40mOhm at 40A and 10V drive voltage. The gate charge is specified at 300 nC maximum at 20V Vgs. With a maximum gate-source voltage of ±20V and a threshold voltage of 4V at 250µA, this MOSFET is suitable for applications requiring robust switching performance. The RFG40N10 is designed for through-hole mounting and operates within an extended temperature range of -55°C to 175°C (TJ). This device is commonly employed in power supply units, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 20 V |
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