RFD4N06LSM9A
MOSFET N-CH 60V 4A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor RFD4N06LSM9A is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 4A at 25°C, with a maximum power dissipation of 30W. The Rds On (Max) is specified at 600mOhm at 1A and 5V, with a gate drive voltage typically around 5V. The device is housed in a TO-252 (DPAK) surface mount package, facilitating automated assembly. Key parameters include a maximum Gate Charge (Qg) of 8 nC at 10V and a threshold voltage (Vgs(th)) of 2.5V at 250µA. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply designs, motor control, and general-purpose power switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
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