RFD3055
MOSFET N-CH 60V 12A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor RFD3055 is a 60V N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 12A continuous drain current capability at 25°C and a maximum power dissipation of 53W (Tc). The IPAK package offers convenient mounting, and its Rds(on) is specified at 150mOhm maximum at 12A and 10V gate drive. Key electrical parameters include a 23nC gate charge and 300pF input capacitance. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply circuits, motor control, and general power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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