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NDS9430A

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NDS9430A

MOSFET P-CH 20V 5.3A 8SOIC

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor NDS9430A is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 5.3A at 25°C. The device offers a low on-resistance (Rds On) of 50mOhm maximum at 5.3A and 10V Vgs. Key electrical parameters include a Gate Charge (Qg) of 50 nC maximum at 10V Vgs and an input capacitance (Ciss) of 950 pF maximum at 15V Vds. The NDS9430A is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, with a maximum power dissipation of 2.5W. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 5.3A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 15 V

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