NDS352P
MOSFET P-CH 20V 850MA SUPERSOT3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor NDS352P is a P-Channel MOSFET designed for surface-mount applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 850mA at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 350mOhm at 1A and 10V gate drive. Key electrical characteristics include a Gate Charge (Qg) of 4 nC maximum at 5V and Input Capacitance (Ciss) of 125 pF maximum at 10V. The NDS352P is manufactured using MOSFET technology and is supplied in a SOT-23-3 package. It operates across a temperature range of -55°C to 150°C. This component finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 850mA (Ta) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 10 V |
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