NDP7061
MOSFET N-CH 60V 64A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's NDP7061 is an N-Channel Power MOSFET designed for high-current applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 64A at 25°C. The low on-resistance (Rds On) of 16mOhm at 35A and 10V gate-source voltage (Vgs) ensures efficient power transfer. With a maximum power dissipation of 130W (Tc) and a junction temperature range of -65°C to 175°C, the NDP7061 is suitable for demanding environments. The TO-220-3 through-hole package facilitates easy integration into printed circuit boards. Key electrical parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 1930 pF at 25V. This MOSFET technology is utilized in power supply units, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1930 pF @ 25 V |
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