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NDB4060L

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NDB4060L

MOSFET N-CH 60V 15A D2PAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor NDB4060L is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 15A at 25°C. With a maximum power dissipation of 50W (Tc), it is suitable for power management solutions in automotive and industrial sectors. The device exhibits a low on-resistance (Rds On) of 80mOhm at 15A and 10V, with a gate threshold voltage (Vgs(th)) of 2V at 250µA. The NDB4060L is housed in a TO-263 (D2PAK) surface mount package, facilitating efficient thermal management. Key electrical characteristics include an input capacitance (Ciss) of 600pF at 25V and a gate charge (Qg) of 17nC at 5V. It operates within a temperature range of -65°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 25 V

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