ISL9N7030BLS3ST
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET® N-Channel Power MOSFET, part number ISL9N7030BLS3ST. This TO-263AB surface mount device offers a 30V drain-source voltage and a continuous drain current of 75A at 25°C (Tc). Featuring a low on-resistance of 9mOhm at 75A and 10V Vgs, this MOSFET utilizes advanced MOSFET technology. Key parameters include a 68nC gate charge and 2600pF input capacitance. With a maximum power dissipation of 100W (Tc) and an operating temperature range of -55°C to 175°C, this component is suitable for demanding applications in power supply, automotive, and industrial sectors. The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V.
Additional Information
Series: UltraFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 15 V |
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