ISL9N322AS3ST
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's UltraFET® ISL9N322AS3ST is an N-Channel Power MOSFET designed for demanding applications. This TO-263AB surface mount component features a 30V drain-source breakdown voltage and a continuous drain current rating of 35A at 25°C case temperature, with a maximum power dissipation of 50W when mounted on a typical PCB. The device exhibits a low on-resistance of 22mOhm at 35A and 10V Vgs, supported by a gate drive voltage range of 4.5V to 10V. Key electrical parameters include a maximum gate charge of 27nC at 10V and an input capacitance (Ciss) of 970pF at 15V. Operating across an extended temperature range of -55°C to 175°C, this MOSFET is suitable for automotive, industrial power supply, and high-performance computing applications.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 15 V |
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