ISL9N312AS3ST
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's ISL9N312AS3ST is an N-Channel UltraFET® Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 58A at 25°C (Tc). With a low on-resistance (Rds On) of 12mOhm at 58A and 10V Vgs, it minimizes conduction losses. The TO-263AB surface mount package facilitates efficient thermal management, supporting a power dissipation of 75W (Ta). Key parameters include a gate charge (Qg) of 38 nC at 10V Vgs and an input capacitance (Ciss) of 1450 pF at 15V Vds. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in automotive and industrial power supply designs.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
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