ISL9N312AD3ST
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ ISL9N312AD3ST is a 30V N-Channel Power MOSFET. This device offers a low Rds(on) of 12mOhm at 50A and 10V Vgs, with a continuous drain current of 50A at 25°C (Tc). Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 1450 pF at 15V. The MOSFET is rated for a maximum power dissipation of 75W (Ta) and operates across an extended temperature range of -55°C to 175°C (TJ). It features a surface mount TO-252AA package (also known as DPAK). Applications include power supply, power switching, and motor control in industrial and automotive sectors.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
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