ISL9N312AD3
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET® ISL9N312AD3 is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 30 V. This through-hole component, packaged in an IPAK (TO-251-3 Short Leads), offers a continuous drain current (Id) of 50A at 25°C (Tc). The maximum power dissipation is 75W (Ta). Key electrical characteristics include a low Rds(On) of 12mOhm at 50A and 10V, and a gate charge (Qg) of 38 nC at 10V. It features input capacitance (Ciss) of 1450 pF at 15 V and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. This component is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
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