ISL9N310AS3ST
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's UltraFET® series N-Channel Power MOSFET, part number ISL9N310AS3ST, is a surface mount component designed for demanding applications. This TO-263AB packaged device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 62A at 25°C (Tc). With a maximum Rds(on) of 10mOhm at 62A and 10Vgs, it offers efficient power handling, dissipating up to 70W (Ta). Key electrical parameters include a gate charge (Qg) of 48 nC at 10Vgs and an input capacitance (Ciss) of 1800 pF at 15Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial, and power supply applications where high current and low on-resistance are critical.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 62A, 10A |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 15 V |
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