ISL9N310AP3
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET® ISL9N310AP3 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 30 V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 62A at 25°C (Tc). The device exhibits a low on-resistance of 10mOhm maximum at 62A and 10V Vgs. Key parameters include a gate charge (Qg) of 48 nC maximum at 10 V and input capacitance (Ciss) of 1800 pF maximum at 15 V. With a maximum power dissipation of 70W (Ta), it is suitable for demanding power conversion and management circuits. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is packaged in a standard TO-220AB through-hole configuration. The UltraFET® technology ensures efficient switching and robust performance in automotive and industrial power systems.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 62A, 10A |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 15 V |