ISL9N310AD3
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's ISL9N310AD3 is an N-Channel UltraFET® Power MOSFET designed for demanding applications. This component offers a continuous drain current of 35A (Tc) and a drain-to-source voltage of 30V. Key electrical characteristics include a maximum Rds(on) of 10 Ohms at 35A and 10V Vgs, with a gate charge of 48 nC at 10V and input capacitance of 1800 pF at 15V. The device supports a wide gate-source voltage range from 4.5V to 10V for achieving optimal on-resistance. It is packaged in a TO-251 (IPAK) through-hole configuration, rated for a maximum power dissipation of 70W (Ta) and operating temperature range of -55°C to 175°C. This device finds application in power management and conversion systems across various industrial sectors.
Additional Information
Series: UltraFET®RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 35A, 10A |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-251 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 15 V |