ISL9N308AS3ST
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET® ISL9N308AS3ST is a 30V N-Channel Power MOSFET. This device features a low on-resistance of 8mOhm maximum at 75A and 10V Vgs. The continuous drain current capability is 75A at 25°C, with a maximum power dissipation of 100W at the same temperature. Key parameters include a gate charge of 68 nC maximum at 10V and input capacitance of 2600 pF maximum at 15V. The operating junction temperature ranges from -55°C to 175°C. It is supplied in a TO-263AB surface mount package. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 15 V |
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