ISL9N308AP3
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET® ISL9N308AP3 is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This through-hole component, packaged in a TO-220AB, offers a continuous drain current (Id) of 75A at 25°C and a maximum power dissipation of 100W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 8mOhm at 75A and 10V, and a gate charge (Qg) of 68 nC at 10V. Input capacitance (Ciss) is specified at 2600 pF at 15V. The device operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in power supply units, motor control, and automotive systems.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 15 V |
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