ISL9N306AP3
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET® ISL9N306AP3 is an N-Channel Power MOSFET designed for demanding applications. This component offers a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C case temperature. With a maximum Rds(on) of 6mOhm at 75A and 10V, it provides low conduction losses. The device features a gate charge (Qg) of 90 nC maximum at 10V and an input capacitance (Ciss) of 3400 pF maximum at 15V. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V maximum at 250µA. The ISL9N306AP3 is packaged in a TO-220AB through-hole configuration and can dissipate up to 125W at 25°C ambient temperature. Its robust operating temperature range of -55°C to 175°C makes it suitable for use in automotive, industrial power, and high-performance computing sectors.
Additional Information
Series: UltraFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 15 V |
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