ISL9N303AS3ST
MOSFET N-CH 30V 75A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's ISL9N303AS3ST is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 215W (Tc). The low on-resistance (Rds On) of 3.2mOhm is achieved at 75A and 10V gate-to-source voltage. With a gate charge (Qg) of 172 nC at 10V and input capacitance (Ciss) of 7000 pF, it offers efficient switching characteristics. The device operates over a wide temperature range of -55°C to 175°C (TJ) and is housed in a TO-263-3, D2PAK (TO-263AB) surface mount package. This MOSFET is suitable for power management, automotive, and industrial power applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 15 V |
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