ISL9N303AS3
MOSFET N-CH 30V 75A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's ISL9N303AS3 is an N-Channel UltraFET™ Power MOSFET designed for high-performance applications. This component features a 30V drain-source voltage and a continuous drain current capability of 75A at 25°C, with a maximum power dissipation of 215W (Tc). The low on-resistance of 3.2mOhm at 75A and 10V gate-source voltage, coupled with a low gate charge of 172 nC at 10V, ensures efficient switching performance.
The ISL9N303AS3 utilizes advanced MOSFET technology and is housed in a TO-262-3 Long Leads, I2PAK package, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This device is commonly employed in power supply units, automotive electronics, and industrial motor control systems where robust and efficient power handling is critical.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 15 V |
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