IRLR130ATM
MOSFET N-CH 100V 13A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor IRLR130ATM is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 13A at 25°C (Tc). The low on-resistance of 120mOhm at 6.5A and 5V gate drive makes it suitable for efficient power switching. With a maximum gate charge (Qg) of 24 nC at 5V and input capacitance (Ciss) of 755 pF at 25V, it offers optimized switching characteristics. The MOSFET is packaged in a TO-252 (DPAK) surface-mount case, ideal for high-density board designs. Its power dissipation ratings are 2.5W (Ta) and 46W (Tc), with an operating temperature range of -55°C to 150°C. This component finds utility in industrial automation, consumer electronics, and power supply designs requiring robust N-channel MOSFET performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 6.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 755 pF @ 25 V |
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