IRLI610ATU
MOSFET N-CH 200V 3.3A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor IRLI610ATU is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 3.3A at 25°C (Tc). The MOSFET offers a maximum on-resistance (Rds On) of 1.5 Ohms at 1.65A and 5V gate drive. With a gate charge (Qg) of 9 nC (max) at 5V and input capacitance (Ciss) of 240 pF (max) at 25V, it provides efficient switching characteristics. Power dissipation is rated at 3.1W (Ta) and 33W (Tc). The device is packaged in a TO-262-3 Long Leads, I2PAK (TO-262AA) format for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial automation, power supply, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.65A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
Request a Quote
Clients Also Buy
ISL9N303AS3
MOSFET N-CH 30V 75A I2PAK
FQPF9N25
MOSFET N-CH 250V 6.7A TO220F
SFI9630TU
P-CHANNEL POWER MOSFET
