IRFU120ATU
MOSFET N-CH 100V 8.4A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor IRFU120ATU is an N-Channel Power MOSFET designed for various industrial applications. This device features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 8.4A at 25°C (Tc). The IRFU120ATU offers a low on-resistance (Rds On) of 200mOhm maximum at 4.2A and 10V Vgs. With a gate charge of 22 nC at 10V and input capacitance of 480 pF at 25V, this MOSFET is suitable for power switching applications. The IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) supports through-hole mounting and a maximum power dissipation of 32W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 32W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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