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IRFU120ATU

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IRFU120ATU

MOSFET N-CH 100V 8.4A IPAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor IRFU120ATU is an N-Channel Power MOSFET designed for various industrial applications. This device features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 8.4A at 25°C (Tc). The IRFU120ATU offers a low on-resistance (Rds On) of 200mOhm maximum at 4.2A and 10V Vgs. With a gate charge of 22 nC at 10V and input capacitance of 480 pF at 25V, this MOSFET is suitable for power switching applications. The IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) supports through-hole mounting and a maximum power dissipation of 32W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Rds On (Max) @ Id, Vgs200mOhm @ 4.2A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)-
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 25 V

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