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IRFS750A

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IRFS750A

MOSFET N-CH 400V 8.4A TO220F

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor IRFS750A is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 400 V and a continuous Drain Current (Id) of 8.4 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 300 mOhm at 4.2 A and 10 V gate drive. The device has a maximum power dissipation of 49 W (Tc) and a typical input capacitance (Ciss) of 2780 pF at 25 V. Gate charge (Qg) is rated at 131 nC at 10 V. The IRFS750A is housed in a TO-220F-3 package and is suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.4A (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 4.2A, 10V
FET Feature-
Power Dissipation (Max)49W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 25 V

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