IRFS634B
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor N-CHANNEL POWER MOSFET, IRFS634B, offers a 250V drain-to-source voltage and 8.1A continuous drain current at 25°C. This through-hole component, housed in a TO-220F-3 package, features a maximum on-resistance of 450mOhm at 4.05A and 10V gate-source voltage. With a gate charge of 38nC and input capacitance of 1000pF, it is suitable for applications requiring efficient power switching. The operating temperature range is -55°C to 150°C. This device finds utility in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tj) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 4.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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