IRFS350A
MOSFET N-CH 400V 11.5A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor N-Channel Power MOSFET, part number IRFS350A. This device features a 400V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11.5A at 25°C (Tc). The IRFS350A offers a maximum on-resistance (Rds On) of 300mOhm at 5.75A and 10V gate drive. With a maximum power dissipation of 92W (Tc), it is housed in a TO-3PF through-hole package. Key parameters include a gate charge (Qg) of 131nC at 10V and input capacitance (Ciss) of 2780pF at 25V. This MOSFET is suitable for applications in power supplies and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V |
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