IRFI614BTUFP001
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor IRFI614BTUFP001 is an N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 2.8A at 25°C (Tc). The device features a maximum Rds(on) of 2 Ohms at 1.4A and 10V Vgs. Key parameters include a gate charge (Qg) of 10.5 nC at 10V and input capacitance (Ciss) of 275 pF at 25V. With a maximum power dissipation of 40W at 25°C (Tc) and 3.13W at 25°C (Ta), it is suitable for high-power switching and amplification. The IRFI614BTUFP001 is housed in a TO-262-3 Long Leads (I2PAK) package, facilitating through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
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