HUFA76639P3
MOSFET N-CH 100V 51A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUFA76639P3 is an N-Channel UltraFET™ MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 51A at 25°C, with a maximum power dissipation of 180W (Tc). The Rds On is specified at a maximum of 26mOhm at 51A, 10V. The device operates with a gate-source voltage range of ±16V and a threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a maximum input capacitance (Ciss) of 2400 pF at 25 V and a gate charge (Qg) of 86 nC at 10 V. The HUFA76639P3 is housed in a TO-220-3 package, suitable for through-hole mounting, and is rated for operation across an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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