HUFA76633P3
MOSFET N-CH 100V 39A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ N-Channel Power MOSFET, part number HUFA76633P3. This TO-220-3 packaged device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 39A at 25°C (Tc). The MOSFET offers a low on-resistance (Rds On) of 35mOhm maximum at 39A and 10V (Vgs). Key parameters include input capacitance (Ciss) of 1820pF maximum at 25V (Vds) and gate charge (Qg) of 67nC maximum at 10V (Vgs). With a maximum power dissipation of 145W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is suitable for demanding applications in power supplies, motor control, and industrial automation.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
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