HUFA76629D3S
MOSFET N-CH 100V 20A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUFA76629D3S is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. With a maximum power dissipation of 110W (Tc), it is well-suited for high-power switching in industrial and automotive sectors. The device offers a low on-resistance (Rds On) of 52mOhm at 20A and 10V Vgs, ensuring efficient operation. Its surface mount TO-252 (DPAK) package facilitates integration into compact designs. Key electrical parameters include a gate charge (Qg) of 46nC and input capacitance (Ciss) of 1285pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1285 pF @ 25 V |