HUFA76609D3ST
MOSFET N-CH 100V 10A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUFA76609D3ST is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc). With a maximum on-resistance (Rds On) of 160mOhm at 10A and 10V Vgs, it offers reduced conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±16V. Key parameters include a gate charge (Qg) of 16 nC at 10V and input capacitance (Ciss) of 425 pF at 25V. Rated for 49W of power dissipation at 25°C (Tc), it operates across a wide temperature range of -55°C to 175°C (TJ). The HUFA76609D3ST is housed in a TO-252 (DPAK) surface-mount package, commonly utilized in industrial, automotive, and consumer electronics for power management solutions.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 25 V |