HUFA76445S3S
MOSFET N-CH 60V 75A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUFA76445S3S is an N-Channel MOSFET designed for high-power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 75A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 6.5mOhm at 75A and 10V, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. Key electrical characteristics include a maximum gate charge (Qg) of 150 nC at 10V and an input capacitance (Ciss) of 4965 pF at 25V. With a maximum power dissipation of 310W (Tc), this MOSFET is housed in a TO-263 (D2PAK) surface mount package, suitable for demanding thermal environments. It operates across an industrial temperature range of -55°C to 175°C (TJ). This component finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4965 pF @ 25 V |
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