HUFA76445P3
MOSFET N-CH 60V 75A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor HUFA76445P3, an N-Channel UltraFET™ MOSFET, offers a 60V drain-to-source voltage and a continuous drain current of 75A at 25°C. This component features a low Rds On of 6.5mOhm at 75A and 10V Vgs, with a maximum power dissipation of 310W (Tc). The gate charge is specified at 150 nC max at 10V, and input capacitance (Ciss) is 4965 pF max at 25V. The HUFA76445P3 is housed in a TO-220-3 through-hole package, suitable for operation across a wide temperature range from -55°C to 175°C. This device is widely utilized in industrial and power supply applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4965 pF @ 25 V |
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