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HUFA76439P3

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HUFA76439P3

MOSFET N-CH 60V 75A TO220-3

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's HUFA76439P3 is an N-Channel UltraFET™ power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 155W (Tc). The device exhibits a low on-resistance (Rds On) of 12mOhm at 75A and 10V. Key characteristics include a gate charge (Qg) of 84 nC at 10V and input capacitance (Ciss) of 2745 pF at 25V. The HUFA76439P3 utilizes a TO-220-3 through-hole package, suitable for demanding thermal management. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is widely utilized in power switching, motor control, and power management circuits across various industrial sectors.

Additional Information

Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)155W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2745 pF @ 25 V

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