HUFA76432S3ST
MOSFET N-CH 60V 59A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUFA76432S3ST is an N-Channel MOSFET with a 60V drain-source voltage. This component offers a continuous drain current of 59A (Tc) and a maximum power dissipation of 130W (Tc). It features a low on-resistance of 17mOhm at 59A and 10V gate-source voltage. The device has a gate charge of 53 nC (max) at 10V and an input capacitance of 1765 pF (max) at 25V. Designed for surface mounting in a TO-263-3, D2PAK package, it operates across a temperature range of -55°C to 175°C. Applications include power switching and motor control in various industrial and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 59A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765 pF @ 25 V |
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