HUFA76429D3ST
MOSFET N-CH 60V 20A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ HUFA76429D3ST is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 20A at 25°C. The low on-resistance of 23mOhm at 20A and 10V (Vgs) contributes to efficient power handling, with a maximum power dissipation of 110W (Tc). The device supports a gate drive range from 4.5V to 10V, with a maximum gate-source voltage of ±16V. Key electrical characteristics include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 1480 pF at 25V. The HUFA76429D3ST is packaged in a TO-252 (DPAK) surface-mount configuration, suitable for various industrial, automotive, and power supply designs. Operating temperature range is -55°C to 175°C.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |
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