HUFA75842S3S
MOSFET N-CH 150V 43A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUFA75842S3S is an N-Channel UltraFET™ MOSFET designed for demanding power applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 43A at 25°C, with a maximum power dissipation of 230W (Tc). The Rds On is specified at a maximum of 42mOhm at 43A and 10V gate drive. Its TO-263-3, D2PAK package facilitates efficient surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 175 nC at 20V and Input Capacitance (Ciss) of 2730 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industries such as automotive, industrial power supplies, and motor control.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2730 pF @ 25 V |
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