HUFA75637P3
MOSFET N-CH 100V 44A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUFA75637P3 is an N-Channel power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 44A at 25°C. With a low on-resistance (Rds On) of 30mOhm at 44A and 10V Vgs, it minimizes conduction losses. The HUFA75637P3 offers a maximum power dissipation of 155W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 108 nC at 20V and input capacitance (Ciss) of 1700 pF at 25V. The device is housed in a standard TO-220-3 through-hole package. This component is suitable for power switching and motor control applications in industrial and automotive sectors. It supports a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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