HUFA75623S3ST
MOSFET N-CH 100V 22A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUFA75623S3ST is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 22A at 25°C with a maximum power dissipation of 85W (Tc). The Rds(On) is specified at 64mOhm maximum at 22A and 10V gate drive. Key electrical characteristics include a Gate Charge (Qg) of 52 nC maximum at 20V and Input Capacitance (Ciss) of 790 pF maximum at 25V. The device is housed in a TO-263 (D2PAK) surface mount package, suitable for robust thermal management. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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