HUFA75545P3
MOSFET N-CH 80V 75A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ HUFA75545P3 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 80V. This through-hole component in a TO-220-3 package offers a continuous drain current (Id) of 75A at 25°C (Tc) and a maximum power dissipation of 270W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 10mOhm at 75A and 10V, a gate charge (Qg) of 235 nC at 20V, and input capacitance (Ciss) of 3750 pF at 25V. The HUFA75545P3 operates across a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V. This device is suitable for applications in power switching and motor control.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 25 V |
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