HUFA75345P3
MOSFET N-CH 55V 75A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUFA75345P3 is an N-Channel UltraFET™ power MOSFET designed for demanding applications. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current rating of 75A at 25°C (Tc), with a maximum power dissipation of 325W (Tc). The UltraFET™ technology delivers a low on-resistance of 7mOhm at 75A and 10V Vgs. Key parameters include input capacitance (Ciss) of 4000pF at 25V and gate charge (Qg) of 275nC at 20V. The device is housed in a TO-220-3 through-hole package and operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 325W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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