HUFA75344S3ST
MOSFET N-CH 55V 75A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUFA75344S3ST is a high-performance N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 285W (Tc). The low on-resistance of 8mOhm at 75A and 10V gate drive voltage, coupled with a gate charge (Qg) of 210 nC at 20V, ensures efficient switching. Its input capacitance (Ciss) is 3200 pF at 25V. The device is housed in a TO-263-3, D2PAK surface mount package, facilitating robust thermal management. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 285W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V |
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