HUFA75329G3
N-CHANNEL POWER MOSFETManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's UltraFET® HUFA75329G3 is an N-channel power MOSFET featuring a 55V drain-source voltage (Vdss). This through-hole component, housed in a TO-247-3 package, offers a continuous drain current (Id) of 49A at 25°C and a maximum power dissipation of 128W (Tc). Key electrical characteristics include a maximum Rds On of 24mOhm at 49A and 10V, an input capacitance (Ciss) of 1060pF at 25V, and a gate charge (Qg) of 75nC at 20V. The device operates within a temperature range of -55°C to 175°C (TJ). This component is utilized in power management applications across various industries, including industrial automation, automotive, and telecommunications.
Additional Information
Series: UltraFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 49A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
Request a Quote
Clients Also Buy
HUFA76609D3ST_NL
N-CHANNEL POWER MOSFET
ISL9N310AD3ST_NL
N-CHANNEL POWER MOSFET
ISL9N310AP3
N-CHANNEL POWER MOSFET