HUFA75309D3S
MOSFET N-CH 55V 19A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUFA75309D3S is an N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 19A at 25°C, with a maximum power dissipation of 55W (Tc). The Rds(On) is specified at a maximum of 70mOhm at 19A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 24 nC (max) at 20V and an input capacitance (Ciss) of 350 pF (max) at 25V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-252 (DPAK) surface-mount package. This MOSFET is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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