HUF76645P3
MOSFET N-CH 100V 75A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ N-Channel Power MOSFET, part number HUF76645P3. This TO-220-3 packaged device features a 100V drain-source voltage (Vdss) and a continuous drain current of 75A at 25°C (Tc). With a maximum power dissipation of 310W (Tc), it offers a low on-resistance of 14 mOhm at 75A and 10V Vgs. Key characteristics include a gate charge (Qg) of 153 nC (Max) at 10V and input capacitance (Ciss) of 4400 pF (Max) at 25V. Operating temperatures range from -55°C to 175°C (TJ). This component is suitable for applications in power supply, motor control, and general high-current switching.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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