HUF76633S3ST
MOSFET N-CH 100V 39A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ HUF76633S3ST is an N-Channel power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 39 A at 25°C, with a maximum power dissipation of 145 W at the same temperature. The low on-resistance (Rds On) of 35 mOhm is achieved at 39 A and 10 V gate-source voltage (Vgs).
The HUF76633S3ST utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package. Key electrical characteristics include a gate charge (Qg) of 67 nC at 10 V and input capacitance (Ciss) of 1820 pF at 25 V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and supports Vgs values up to ±16 V, with a threshold voltage (Vgs(th)) of 3 V at 250 µA. This component is commonly found in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 39A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V |
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