HUF76619D3S
MOSFET N-CH 100V 18A TO252AAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor UltraFET™ series HUF76619D3S is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 18 A at 25°C, with a maximum power dissipation of 75 W. The on-resistance (Rds On) is a maximum of 85 mOhm at 18 A and a gate-source voltage (Vgs) of 10 V, achievable with a drive voltage range of 4.5 V to 10 V.
Key electrical characteristics include a maximum gate charge (Qg) of 29 nC and a maximum input capacitance (Ciss) of 767 pF at 25 V. The device is packaged in a TO-252 (DPAK) surface mount configuration, suitable for automated assembly processes. It operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive applications where robust switching performance is critical.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 767 pF @ 25 V |
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