HUF76445S3ST
MOSFET N-CH 60V 75A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's HUF76445S3ST, an UltraFET™ N-Channel Power MOSFET, offers robust performance with a 60V drain-to-source voltage and continuous drain current capability of 75A at 25°C. This component features a low on-resistance of 6.5mOhm at 75A and 10V Vgs, facilitated by a 10V gate drive. With a maximum power dissipation of 310W at the case temperature, it is designed for demanding applications. Key electrical parameters include a gate charge of 150 nC at 10V and input capacitance of 4965 pF at 25V. The device is housed in a TO-263-3 (D2PAK) surface mount package, suitable for high-density board designs. Operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4965 pF @ 25 V |
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